21 March 2012 Multiple columns for high-throughput complementary e-beam lithography (CEBL)
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Abstract
Developers of e-beam lithography systems are pursuing diverse strategies to bolster throughput. To achieve parallelism, some e-beam efforts focus on building multiple-columns, and others focus on developing columns with multiple beamlets. In this paper, we discuss the benefits and throughput of a multiple column approach for a particular application: Complementary E-Beam Lithography (CEBL). CEBL is a novel approach where the e-beam lithography system is used only to pattern the smallest features. Everything else is patterned with existing optical lithography equipment. By working hand-in-hand with optical lithography, CEBL provides an urgently needed solution to create next-generation microchips. Moreover, CEBL is extendable for multiple technology generations. We show how a multiple column approach is the best way to meet the requirements for CEBL, including high throughput, high resolution and overlay accuracy, without excess complexity or cost.
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Enden D. Liu, Cong Tran, Ted Prescop, David K. Lam, "Multiple columns for high-throughput complementary e-beam lithography (CEBL)", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83231Y (21 March 2012); doi: 10.1117/12.916118; https://doi.org/10.1117/12.916118
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