4 April 2012 Potential new CD metrology metric combined with data fusion for future node production
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Abstract
Introduction of new material stacks, more sophisticated design rules and complex 3D architectures in semiconductor technology has led to major metrology challenges by posing stringent measurement precision and accuracy requirements for various critical dimensions (CD), feature shape and profile. Current CD metrology techniques being used in development and production such as CD-SEM, scatterometry and CDAFM, individually have intrinsic limitations that must be overcome. The approach of hybrid automated metrology seems necessary. Using multiple tools in unison is an adequate solution when adding their respective strengths to overcome individual limitations. Such solution will give the industry a better metrology solution than the conventional approach. Nevertheless, this is not enough since the industry is requested for 2D and 3D profiles information. Indeed, CD, height and/or Sidewall angle are information which is limited for future nodes production. Full profile information is necessary. In this paper, the first part will be dedicated to the introduction of contour object as a new standard for the semiconductor industry. This metric will take into account all pattern's profile information in order to overcome the limitations of simple CD and/or SWA information. The second part will present and discuss results concerning data fusion and its application to hybrid metrology. We will illustrate hybrid metrology with an application to CD-SEM enhancement with a reference technique such as the AFM3D or TEM technology. We will show that it could be possible to improve RMS error of CD-SEM by a factor of 78%. We think that such trend can be extended to all microelectronic levels in IC manufacturing and subsequently significantly reduce cycle time and improve production yield through easier hotspot detection.
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J. Foucher, J. Hazart, N. Griesbach Schuch Figueiro, "Potential new CD metrology metric combined with data fusion for future node production", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832406 (4 April 2012); doi: 10.1117/12.916475; https://doi.org/10.1117/12.916475
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