5 April 2012 Multiple column high-throughput e-beam inspection (EBI)
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Abstract
Single-column e-beam systems are used in production for the detection of electrical defects, but are too slow to be used for the detection of small physical defects, and can't meet future inspection requirements. This paper presents a multiplecolumn e-beam technology for high throughput wafer inspection. Multibeam has developed all-electrostatic columns for high-resolution imaging. The elimination of magnetic coils enables the columns to be small; e-beam deflection is faster in the absence of magnetic hysteresis. Multiple miniaturecolumns are assembled in an array. An array of 100 columns covers the entire surface of a 300mm wafer, affording simultaneous cross-wafer sampling. Column performance simulations and system architecture are presented. Also provided are examples of high throughput, more efficient, multiple-column wafer inspection.
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David K. Lam, Kevin M. Monahan, Enden D. Liu, Cong Tran, Ted Prescop, "Multiple column high-throughput e-beam inspection (EBI)", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240G (5 April 2012); doi: 10.1117/12.927032; https://doi.org/10.1117/12.927032
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