3 April 2012 Contour metrology using critical dimension atomic force microscopy
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Abstract
The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a complementary instrument for contour measurement and verification. Although data from CD-AFM is inherently three dimensional, the planar two-dimensional data required for contour metrology is not easily extracted from the top-down CD-AFM data. This is largely due to the limitations of the CD-AFM method for controlling the tip position and scanning. We describe scanning techniques and profile extraction methods to obtain contours from CD-AFM data. We also describe how we validated our technique, and explain some of its limitations. Potential sources of error for this approach are described, and a rigorous uncertainty model is presented. Our objective is to show which data acquisition and analysis methods could yield optimum contour information while preserving some of the strengths of CD-AFM metrology. We present comparison of contours extracted using our technique to those obtained from the scanning electron microscope (SEM), and the helium ion microscope (HIM).
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Ndubuisi G. Orji, Ronald G. Dixson, András E. Vladár, Bin Ming, Michael T. Postek, "Contour metrology using critical dimension atomic force microscopy", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240U (3 April 2012); doi: 10.1117/12.918056; https://doi.org/10.1117/12.918056
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