Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy

L. W. Kong; J. R. Lloyd; M. Liehr; A. C. Rudack; S. Arkalgud; A. C. Diebold

doi:10.1117/12.916599

3 April 2012 Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy

L. W. Kong, J. R. Lloyd, M. Liehr, A. C. Rudack, S. Arkalgud, A. C. Diebold

Author Affiliations +

Proceedings Volume 8324, Metrology, Inspection, and Process Control for Microlithography XXVI; 832412 (2012) https://doi.org/10.1117/12.916599
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Laboratory-based X-ray microscopy combined with computational tomography imaging is demonstrated to have advantages over other methods of inspecting through-silicon vias (TSVs). We show that the 8 keV X-rays used by Nano X-ray Computed Tomography (NanoXCT^TM) are capable of imaging voids inside filled vias before and after annealing without cross-sectioning the TSV. A series of - TSV arrays filled conformally and from the bottom up were inspected by the X-ray microscope before and after annealing. Pre-existing voids in the seamline were observed in conformally filled TSVs before annealing, while bottom up-filled TSVs do not have a seamline or voids. The same TSV samples were repeatedly annealed at 225^oC, and 300^oC. After annealing, the X-ray micrograph of the same TSV array showed void growth in only the conformally filled TSV. In addition, X-ray measurements show the total volume of void growth increased with annealing temperature.

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L. W. Kong, J. R. Lloyd, M. Liehr, A. C. Rudack, S. Arkalgud, and A. C. Diebold "Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832412 (3 April 2012); https://doi.org/10.1117/12.916599

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