5 April 2012 Static and dynamic photoresist shrinkage effects in EUV photoresists
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Abstract
Photoresist shrinkage (a.k.a. line slimming) is an important systematic uncertainty source in critical dimension-scanning electron microscope (CD-SEM) metrology of lithographic features [1][2][3][4][5]. In terms of metrology gauge metrics, it influences both the precision and the accuracy of CD-SEM measurements, while locally damaging the sample. Minimization or elimination of shrinkage is desirable, yet elusive. This error source will furthermore be a factor in CDSEM metrology on such polymer materials into the era of EUV lithography, such that learning to work around this issue will continue to be necessary. Recent work has demonstrated improved understanding of the trends in the shrinkage response depending on electron beam and target parameters in the static measurement case [2][3][4][5][6]. Another recent work has highlighted a second mode of shrinkage that is apparent over time and progresses as a function of time between consecutive measurements, a form of "dynamic shrinkage" that appears to be activated by electron beam, in which the activated feature perpetually and logarithmically shrinks [7][8]. In this work, we will explore both the static and dynamic shrinkage behaviors of various EUV photoresists. The static shrinkage behaviors will be tested for compliance with the SEMATECH shrinkage model [5][6], and further studies will confirm whether or not the dynamic effects are observable. Knowledge of secondary trends in dynamic shrinkage will also be further explored, including how these vary with electron beam energy, activation dose, feature size, and other parameters.
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Benjamin Bunday, Benjamin Bunday, Cecilia Montgomery, Cecilia Montgomery, Warren Montgomery, Warren Montgomery, Aaron Cordes, Aaron Cordes, } "Static and dynamic photoresist shrinkage effects in EUV photoresists", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83241E (5 April 2012); doi: 10.1117/12.916533; https://doi.org/10.1117/12.916533
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