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5 April 2012 Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples
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Scatterometry has been proven to be effective in critical dimension (CD) and sidewall angle (SWA) measurements with good precision and accuracy. In order to study the effectiveness of scatterometry measurement of line edge roughness (LER), calibration samples with known LER have to be fabricated precisely. The relationship between ITRS LER specifications and the feature dimension design of the LER calibration samples is discussed. Electron-beam-direct-write lithography (EBDWL) has been widely used in nanoscale fabrication and is a natural selection for fabricating the designed calibration samples. With the increasingly demanding requirement of lithography resolution in ITRS, the corresponding LER feature of calibration samples becomes more and more challenging to fabricate, even for EBDWL. Proximity effects in EBDWL due to electron scattering can cause significant distortion of fabricated patterns from designed layouts. Model-based proximity effect correction (MBPEC) is an enhancement method for EBDWL to precisely define fine resist features. The effectiveness of MBPEC depends on the availability of accurate electron-beam proximity effect models, which are usually described by point spread functions (PSFs). In this work, a PSF in a double- Gaussian function form at a 50 kV accelerating voltage, an effective beam size, and a development threshold energy level of the resist are calibrated with EBDWL exposure tests. Preliminary MBPEC results indicate its effectiveness in calibration sample fabrication.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Tian Shen, Chun-Hung Liu, Chih-Yu Chen, Hoi-Tou Ng, Kuen-Yu Tsai, Fu-Ming Wang, Chieh-Hsiung Kuan, Yen-Min Lee, Hsin-Hung Cheng, Jia-Han Li, and Alek C. Chen "Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242K (5 April 2012);


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