Paper
3 April 2012 In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry
Yit Sung Ngo, Yifan Qu, Arthur Tay, Tong Heng Lee
Author Affiliations +
Abstract
Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-towafer critical dimensions (CD) uniformity is improved by 5 times.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yit Sung Ngo, Yifan Qu, Arthur Tay, and Tong Heng Lee "In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242N (3 April 2012); https://doi.org/10.1117/12.916133
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Photoresist materials

Critical dimension metrology

Spectroscopy

Spectroscopic ellipsometry

Calcium

Ellipsometry

Back to Top