3 April 2012 In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry
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Abstract
Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-towafer critical dimensions (CD) uniformity is improved by 5 times.
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Yit Sung Ngo, Yit Sung Ngo, Yifan Qu, Yifan Qu, Arthur Tay, Arthur Tay, Tong Heng Lee, Tong Heng Lee, } "In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242N (3 April 2012); doi: 10.1117/12.916133; https://doi.org/10.1117/12.916133
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