Translator Disclaimer
3 April 2012 Real-time scanning detection system of defects on a photomask by using the light scattering and interference method
Author Affiliations +
Abstract
In the process of lithography for semiconductor devices, the disuse of semiconductor devices is caused by the several hundred nanometer size pollutants generated by photochemical reactions, which is called by the haze. Therefore, the real time visual detection system is needed to inspect hazes before the existence of disuse semiconductor devices. We proposed and experimentally confirmed the concept of the real time scanning detection system for the defect on the photo-mask by interference fringes generated between the light wave scattered by small defect on the photo-mask and the reflected light wave from the rest area of the front surface.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sangon Lee, Byung heon Han, Jae Heung Jo, Hae Sung Wee, and Jong Soo Kim "Real-time scanning detection system of defects on a photomask by using the light scattering and interference method", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832430 (3 April 2012); https://doi.org/10.1117/12.916430
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top