You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
5 April 2012Residual layer thickness control and metrology in jet and flash imprint lithography
Jet-and-Flash Imprint Lithography (J-FIL) has demonstrated capability of high-resolution patterning at low costs.
For accurate pattern transfer using J-FIL, it is necessary to have control of the residual layer thickness (RLT) of
cured resist underneath features. Variation in RLT leads to critical dimension variation, thereby degrading device
performance. Substrate nanotopography and feature density variation are two unavoidable sources of variation in
RLT uniformity. The first part of this paper demonstrates the effect of these parameters on RLT variation. Through
experiments and modeling, it has been observed that flatter wafers with lower nanotopography and thinner RLT lead
to better RLT uniformity. However, for studying RLT variation, accurate metrology is critical. Currently, all
metrology is done using destructive cross-section scanning electron microscopy (SEM), which may not be sufficient
for process control. To this end, nondestructive optics-based methods, including the Through-focus Scanning
Optical Microscopy (TSOM) method have been explored in this paper. Simulations reveal the potential to measure
mean RLT, RLT variation, and uncertainty in feature dimension to an accuracy of 1 nm. Experimental validation
and calibration are works in progress. Subsequent development of this technique can lead to a viable in-line
metrology solution for RLT underneath features.
The alert did not successfully save. Please try again later.
Shrawan Singhal, Ravikiran Attota, S. V. Sreenivasan, "Residual layer thickness control and metrology in jet and flash imprint lithography," Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832434 (5 April 2012); https://doi.org/10.1117/12.916958