20 March 2012 Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates
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Abstract
This paper will report on our development of low diffusion EUV resists based on polymer-bound PAG technology. With our low diffusion resist, a wide process window for 30-nm hp of 280nm DOF over a 10% exposure range is achieved on a prototype ADT fullfield scanner. Linewidth roughness of 3.1nm is also achieved. Excellent resist profiles can be achieved on organic ULs or Si hardmask materials. This resist also shows only 1.1 nm carbon growth on witness plate mirrors for cleanables, and no reflectivity loss after mirror cleaning. These results clearly pass for use on all NXE exposure tools. We also have shown good pattern transfer for a Si HM stack using this resist. Finally, we report 17-nm hp resolution at a dose of 14.5mj for a higher absorption resist.
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James W. Thackeray, James W. Thackeray, James F. Cameron, James F. Cameron, Michael Wagner, Michael Wagner, Suzanne Coley, Suzanne Coley, Owendi Ongayi, Owendi Ongayi, Warren Montgomery, Warren Montgomery, Dave Lovell, Dave Lovell, John Biafore, John Biafore, Vidhya Chakrapani, Vidhya Chakrapani, Akiteru Ko, Akiteru Ko, } "Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832508 (20 March 2012); doi: 10.1117/12.917807; https://doi.org/10.1117/12.917807
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