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8 March 2012 EUV resist development for 16nm half pitch
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In order to resolve 16 nm half pitch and beyond upon EUV exposure, we have developed new materials for not only resists but also for under layer materials. As for resist, short acid diffusion length photo-acid generator (PAG) was developed for high resolution. As for under layer, new material with high contact angle (CA) improved line collapse margin towards printing of minimum feature size. It was found that CA of under layer was one of the important factors for resolution improvement. Furthermore, effect of development time was investigated to improve resolution. Short development time gained resolution improvement compared with long one. Finally, combination of these results was investigated. As a result, JSR EUV resist showed the potential of 15nm half pitch resolution.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ken Maruyama, Hiroki Nakagawa, Shalini Sharma, Yoshi Hishiro, Makoto Shimizu, and Tooru Kimura "EUV resist development for 16nm half pitch", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250A (8 March 2012);


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