15 March 2012 Simultaneous calibration of acid diffusion and developer loading parameters for computational lithography
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Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83250L (2012); doi: 10.1117/12.916200
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
Resist parameters for computational lithography model were extracted from a set of gratings. The gratings comprised of lines and spaces where the main feature proximity was modulated by placement of sub and near resolution assist features. Modulating the size of the assist features resulted in simultaneous variation of the amount of photo-acid and developer loading. The straight Gaussian kernel was modified to represent the effect of base quencher to the photo-acid. An additional density based kernel was created to represent the effect of developer loading. These kernels allowed for significant improvement in fitting error. The models were validated against an independent data-set comprised of asymmetric features.
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Ashesh Parikh, "Simultaneous calibration of acid diffusion and developer loading parameters for computational lithography", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250L (15 March 2012); doi: 10.1117/12.916200; https://doi.org/10.1117/12.916200
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KEYWORDS
Diffusion

Data modeling

SRAF

Computational lithography

Calibration

Analog electronics

Etching

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