19 March 2012 Understanding dissolution behavior of 193nm photoresists in organic solvent developers
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Abstract
Herein, we investigate the dissolution behavior of 193-nm chemically amplified resist in different organic solvents at a mechanistic level. We previously reported the effect of solvent developers on the negative tone development (NTD) process in both dry and immersion lithography, and demonstrated various resist performance parameters such as photospeed, critical dimension uniformity, and dissolution rate contrast are strongly affected by chemical nature of the organic developer. We further pursued the investigation by examining the dependence of resist dissolution behavior on their solubility properties using Hansen Solubility Parameter (HSP). The effects of monomer structure, and resist composition, and the effects of different developer chemistry on dissolution behaviors were evaluated by using laser interferometry and quartz crystal microbalance. We have found that dissolution behaviors of methacrylate based resists are significantly different in different organic solvent developers such as OSDTM-1000 Developer* and n-butyl acetate (nBA), affecting their resist performance. This study reveals that understanding the resist dissolution behavior helps to design robust NTD materials for higher resolution imaging.
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Seung-Hyun Lee, Jong Keun Park, Thomas Cardolaccia, Jibin Sun, Cecily Andes, Kathleen O'Connell, George G. Barclay, "Understanding dissolution behavior of 193nm photoresists in organic solvent developers", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250Q (19 March 2012); doi: 10.1117/12.918045; https://doi.org/10.1117/12.918045
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