Modern high-resolution lithography, which employs a chemically amplified resist (CAR) at either 193 or 13.5 nm
wavelength, is often limited by pattern collapse. While the general concepts of how CAR platforms work are widely
understood, the influence of composition on pattern collapse has been studied to a lesser extent. In addition, the subject
is often further complicated by non-disclosure of the resist chemistry used in the lithographic evaluation. Open-source
photoresist platforms can be beneficial for fundamental studies on how individual components influence pattern collapse.
Such platforms should mimic a typical CAR, containing - apart from the polymer - additional components such as photo
acid generators (PAGs) and base quenchers. In this paper, 193 nm and EUVL open-source platforms are presented
wherein the chemistry, composition, and concentration are all disclosed. With the aim to fundamentally understand how
resist composition and behavior influences pattern collapse, the molecular weight of the polymer backbone and the
concentration of both PAG and base quencher were varied. These sets of resists were exposed using both high-end
optical lithography scanners. The results are presented such that the probability of pattern collapse is derived as a
function of the exposure wavelength, chemistry, and component concentrations.