20 March 2012 Critical material properties for pattern collapse mitigation
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Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83250R (2012); doi: 10.1117/12.916364
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Modern high-resolution lithography, which employs a chemically amplified resist (CAR) at either 193 or 13.5 nm wavelength, is often limited by pattern collapse. While the general concepts of how CAR platforms work are widely understood, the influence of composition on pattern collapse has been studied to a lesser extent. In addition, the subject is often further complicated by non-disclosure of the resist chemistry used in the lithographic evaluation. Open-source photoresist platforms can be beneficial for fundamental studies on how individual components influence pattern collapse. Such platforms should mimic a typical CAR, containing - apart from the polymer - additional components such as photo acid generators (PAGs) and base quenchers. In this paper, 193 nm and EUVL open-source platforms are presented wherein the chemistry, composition, and concentration are all disclosed. With the aim to fundamentally understand how resist composition and behavior influences pattern collapse, the molecular weight of the polymer backbone and the concentration of both PAG and base quencher were varied. These sets of resists were exposed using both high-end optical lithography scanners. The results are presented such that the probability of pattern collapse is derived as a function of the exposure wavelength, chemistry, and component concentrations.
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Gustaf Winroth, Todd R. Younkin, James M. Blackwell, Roel Gronheid, "Critical material properties for pattern collapse mitigation", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250R (20 March 2012); doi: 10.1117/12.916364; https://doi.org/10.1117/12.916364



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