20 March 2012 KrF resists for implant layers patterning extreme high-aspect ratio structures with a double focal plane exposure technique
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Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83252D (2012); doi: 10.1117/12.918015
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
The design rules for advanced image sensor applications are requiring continuous CD shrinkage, and increasing aspect ratios which resulting in major challenges associated with using KrF technology. For the implant photo layers in particular, the need to block high-energy boron implants (well above 2 MeV) with extremely localized implant profiles requires an aspect ratio of deep well structures greater than 10:1. Other desirable attributes of a good photoresist for such demanding applications are high transparency, a steep wall profile consistent throughout the entire film, good adhesion with no structure collapse, and a wide process window. In this paper, we will discuss the role of a chemically amplified, ESCAP-type of resist in meeting these design criteria using a double focal plane exposure technique.
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Giorgio Rafaelli, Fabio Ferri, Stefano Volpi, Chisun Hong, "KrF resists for implant layers patterning extreme high-aspect ratio structures with a double focal plane exposure technique", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83252D (20 March 2012); doi: 10.1117/12.918015; https://doi.org/10.1117/12.918015
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KEYWORDS
Optical lithography

Scanning electron microscopy

Photoresist processing

Transparency

Image sensors

Diffusion

Charge-coupled devices

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