13 March 2012 Free form source and mask optimization for negative tone resist development for 22nm node contact holes
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Abstract
In this paper we demonstrate the feasibility of Negative Tone Development (NTD) process to pattern 22nm node contact holes leveraging freeform source and model based assist features. We demonstrate this combined technology with detailed simulation and wafer results. Analysis also includes further improvement achievable using a freeform source compared to a conventional standard source while keeping the mask optimization approaches the same. Similar studies are performed using the Positive Tone Development (PTD) process to demonstrate the benefits of the NTD process.
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Tamer H. Coskun, Tamer H. Coskun, Huixiong Dai, Huixiong Dai, Vishnu Kamat, Vishnu Kamat, Ching-Mei Hsu, Ching-Mei Hsu, Gaetano Santoro, Gaetano Santoro, Chris Ngai, Chris Ngai, Mario Reybrouck, Mario Reybrouck, Grozdan Grozev, Grozdan Grozev, Hsu-Ting Huang, Hsu-Ting Huang, } "Free form source and mask optimization for negative tone resist development for 22nm node contact holes", Proc. SPIE 8326, Optical Microlithography XXV, 83260V (13 March 2012); doi: 10.1117/12.918459; https://doi.org/10.1117/12.918459
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