13 March 2012 A solid immersion interference lithography system for imaging ultra-high numerical apertures with high-aspect ratios in photoresist using resonant enhancement from effective gain media
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Abstract
In the last year our Solid Immersion Lloyd's Mirror Interference Lithography (SILMIL) system has proved to be a successful tool for evanescent interferometric lithography (EIL). The initial goal was to use SILMIL in conjunction with the surface plasmon polariton (SPP) surface states at the resist-metal interface. Through this resonance, we aimed to counter the decay of evanescent images created using EIL. By analyzing the theory in greater detail we were able to develop a better understanding of the resonance phenomena. In this paper, details of the design of SILMIL and how one may utilize it to produce ultra-high numerical apertures (NAs) are given, as well as an introduction to the resonance phenomena and the mechanism behind it. We introduce a new method that requires a gain medium (one that has a negative loss) to achieve significant enhancements, and present an effective gain medium by using a high-index dielectric on low-index media. We present results at λ = 405 nm using such an effective gain medium and also provide a feasible design example at the lithography standard λ = 193 nm.
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Prateek Mehrotra, Chris A. Mack, Richard J. Blaikie, "A solid immersion interference lithography system for imaging ultra-high numerical apertures with high-aspect ratios in photoresist using resonant enhancement from effective gain media", Proc. SPIE 8326, Optical Microlithography XXV, 83260Z (13 March 2012); doi: 10.1117/12.916295; https://doi.org/10.1117/12.916295
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