Doubling the spatial frequency with cavity resonance lithography

Hyesog Lee; Ravi Verma

doi:10.1117/12.916222

13 March 2012 Doubling the spatial frequency with cavity resonance lithography

Hyesog Lee, Ravi Verma

Proceedings Volume 8326, Optical Microlithography XXV; 832610 (2012) https://doi.org/10.1117/12.916222
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

We describe the theory and report the first experimental demonstration of Cavity Resonance Lithography (CRL); a double pattering (DP) technique that can generate patterns 1) with twice the spatial frequency of that of the diffraction limited lithography mask, and 2) at an offset distance that is in the farfield of the mask. CRL requires only a single exposure and development step and does not require any additional processes. With commercially available photoresists (PR) and developers, we have recorded a 32.5 nm half-pitch pattern (which is well below the diffraction limit) at an offset distance of 180 nm (which is well beyond the evanescent decay length scales) using 193 nm illumination. We also discuss strategies to improve the minimum feature size and potential implementation schemes.

Citation Download Citation

Hyesog Lee and Ravi Verma "Doubling the spatial frequency with cavity resonance lithography", Proc. SPIE 8326, Optical Microlithography XXV, 832610 (13 March 2012); https://doi.org/10.1117/12.916222

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