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13 March 2012 Finite element models of lithographic mask topography
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Abstract
Photolithography simulations are widely used to predict, to analyze and to design imaging processes in scanners used for IC manufacture. The success of these efforts is strongly dependent on their ability to accurately capture the key drivers responsible for the image formation. Much effort has been devoted to understanding the impacts of illuminator and projection lens models on the accuracy of the lithography simulations [1-3]. However, of equal significance is the role of the mask models and their interactions with the illuminator models.
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Jacek K. Tyminski, Raluca Popescu, Sven Burger, Jan Pomplun, Lin Zschiedrich, Tomoyuki Matsuyama, and Tomoya Noda "Finite element models of lithographic mask topography", Proc. SPIE 8326, Optical Microlithography XXV, 83261B (13 March 2012); https://doi.org/10.1117/12.916957
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