13 March 2012 Resist loss in 3D compact modeling
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Abstract
An enhancement to compact modeling capability to include photoresist (PR) loss at different heights is developed and discussed. A hypsometric map representing 3-D resist profile was built by applying a first principle approximation to estimate the "energy loss" from the resist top to any other plane of interest as a proportional corresponding change in model threshold, which is analogous to a change in exposure dose. The result is compared and validated with 3D rigorous modeling as well as SEM images. Without increase in computation time, this compact model can construct 3D resist profiles capturing resist profile degradation at any vertical plane. Sidewall angle and standing wave information can also be granted from the vertical profile reconstruction. Since this method does not change any form of compact modeling, it can be integrated to validation and correction without any additional work.
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Xin Zheng, Xin Zheng, Jensheng Huang, Jensheng Huang, Fook Chin, Fook Chin, Aram Kazarian, Aram Kazarian, Chun-Chieh Kuo, Chun-Chieh Kuo, } "Resist loss in 3D compact modeling", Proc. SPIE 8326, Optical Microlithography XXV, 83261C (13 March 2012); doi: 10.1117/12.916582; https://doi.org/10.1117/12.916582
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