13 March 2012 Driving imaging and overlay performance to the limits with advanced lithography optimization
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Proceedings Volume 8326, Optical Microlithography XXV; 83261I (2012); doi: 10.1117/12.916480
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
Immersion lithography is being extended to 22-nm and even below. Next to generic scanner system improvements, application specific solutions are needed to follow the requirements for CD control and overlay. Starting from the performance budgets, this paper discusses how to improve (in volume manufacturing environment) CDU towards 1-nm and overlay towards 3-nm. The improvements are based on deploying the actuator capabilities of the immersion scanner. The latest generation immersion scanners have extended the correction capabilities for overlay and imaging, offering freeform adjustments of lens, illuminator and wafer grid. In order to determine the needed adjustments the recipe generation per user application is based on a combination wafer metrology data and computational lithography methods. For overlay, focus and CD metrology we use an angle resolved optical scatterometer.
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Jan Mulkens, Jo Finders, Hans van der Laan, Paul Hinnen, Michael Kubis, Marcel Beems, "Driving imaging and overlay performance to the limits with advanced lithography optimization", Proc. SPIE 8326, Optical Microlithography XXV, 83261I (13 March 2012); doi: 10.1117/12.916480; http://dx.doi.org/10.1117/12.916480
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KEYWORDS
Semiconducting wafers

Scanners

Overlay metrology

Control systems

Metrology

Optical alignment

Reticles

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