13 March 2012 Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?
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Abstract
A two-step full-chip simulation method for optimization of sub-resolution assist feature placement in a random logic Contact layer using ArF immersion Lithography is presented. Process window, characterized by depth of focus (DOF) , of square or rectangular target features is subject to optimization using the optical and resist effects described by calibrated models (Calibre ® nmOPC, nmSRAF simulation platform). By variation of the assist feature dimension and their distance to main feature in a test pattern, a set of comprehensive rules is derived which is applied to generate raw assist features in a random logic layout. Concurrently with the generation of the OPC shapes for the main features, the raw assist feature become modified to maximize process window and to ensure non-printability of the assist features. In this paper, the selection of a test pattern, the generation of a set of "golden" rules of the raw assist feature generation and their implementation as well as the assist feature coverage in a random logic layout is presented and discussed with respect to performance.
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Ahmed Omran, Ahmed Omran, George Lippincott, George Lippincott, Jochen Schacht, Jochen Schacht, Junjiang Lei, Junjiang Lei, Le Hong, Le Hong, Loran Friedrich, Loran Friedrich, Regina Shen, Regina Shen, Ryan Chou, Ryan Chou, } "Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?", Proc. SPIE 8326, Optical Microlithography XXV, 83261P (13 March 2012); doi: 10.1117/12.915787; https://doi.org/10.1117/12.915787
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