Translator Disclaimer
13 March 2012 OPC model prediction capability improvements by accounting for mask 3D-EMF effects
Author Affiliations +
Abstract
As mask feature sizes have shrunk well below the exposure wavelength, the thin mask of Kirchhoff approximation breaks down and 3D mask effects contribute significantly to the through-focus CD behavior of specific features. While full-chip rigorous 3D mask modeling is not computationally feasible, approximate simulation methods do enable the 3D mask effects to be represented. The use of such approximations improves model prediction capability. This paper will look at a 28nm darkfield and brightfield layer datasets that were calibrated with a Kirchhoff model and with two different 3D-EMF models. Both model calibration accuracy and verification fitness improvements are realized with the use of 3D models.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacky Cheng, Jessy Schramm, Dong Qing Zhang, Yee Mei Foong, Christian Zuniga, Thuy Do, Edita Tejnil, John Sturtevant, Angeline Chung, and Kenneth Jantzen "OPC model prediction capability improvements by accounting for mask 3D-EMF effects", Proc. SPIE 8326, Optical Microlithography XXV, 83261R (13 March 2012); https://doi.org/10.1117/12.916863
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Modeling metrology for calibration of OPC models
Proceedings of SPIE (March 23 2016)
Separable OPC models for computational lithography
Proceedings of SPIE (May 18 2008)
Large scale model of wafer topography effects
Proceedings of SPIE (March 22 2011)
A full-chip 3D computational lithography framework
Proceedings of SPIE (March 12 2012)
Fast and accurate 3D mask model for full chip OPC...
Proceedings of SPIE (March 25 2007)

Back to Top