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14 March 2012 Self-aligned double patterning (SADP) compliant design flow
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Abstract
Double patterning with 193nm optical lithography is inevitable for technology scaling before EUV is ready. In general, there are two major double patterning techniques (DPT): Litho-Etch-Litho-Etch (LELE) and sidewall spacer technology, a Self-Aligned Double Patterning technique (SADP). So far LELE is much more mature than SADP in terms of process development and design flow implementation. However, SADP has stronger scaling potential than LELE due to its smaller design rules on tip-tip and tip-side as well as its intrinsic self-align property. In this paper, we will explain in detail about how to enable a SADP-friendly design flow from multiple perspectives: design constructs, design rules, standard cell library and routing. In addition, the differences between SADP and LELE in terms of design, scaling capability and RC performance will be addressed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuangsheng Ma, Jason Sweis, Hidekazu Yoshida, Yan Wang, Jongwook Kye, and Harry J. Levinson "Self-aligned double patterning (SADP) compliant design flow", Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 832706 (14 March 2012); https://doi.org/10.1117/12.917775
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