Paper
14 March 2012 Local loops for robust inter-layer routing at sub-20 nm nodes
Wenbin Huang, Daniel Morris, Neal Lafferty, Lars Liebmann, Kaushik Vaidyanathan, Kafai Lai, Larry Pileggi, Andrzej J. Strojwas
Author Affiliations +
Abstract
As the metal pitch continues to shrink, it becomes inefficient, if not impossible, to use traditional via redundancy schemes at and below the 14 nm node. Double-cut vias and via bar connections will either block many adjacent routing resources or make it impossible to pattern at these advanced technologies nodes. In this paper we examine a scalable via redundancy strategy based on local loops. We evaluate the yield and timing impact of local loops and use a 14 nm standard cell library and functional block designs to assess the design cost of local loops. Furthermore, lithography contours and process window simulations are used to demonstrate the manufacturability of this structure. With supporting EDA tools and design-technology co-optimization (DTCO), local loops will become an important via redundancy topology at sub-20nm nodes.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenbin Huang, Daniel Morris, Neal Lafferty, Lars Liebmann, Kaushik Vaidyanathan, Kafai Lai, Larry Pileggi, and Andrzej J. Strojwas "Local loops for robust inter-layer routing at sub-20 nm nodes", Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 83270D (14 March 2012); https://doi.org/10.1117/12.916290
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Cited by 5 scholarly publications.
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KEYWORDS
Metals

Lithography

Solids

Failure analysis

Capacitance

Manufacturing

Resistance

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