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Dry etching challenges for patterning smooth lines: LWR reduction of extreme ultra violet photo resist
Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process
Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher
Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate
3d modeling of LER transfer from the resist to the underlying substrate: the effect of the resist roughness