Paper
16 March 2012 Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process
T. Chevolleau, G. Cunge, M. Delalande, X. Chevalier, R. Tiron, S. David, M. Darnon, C. Navarro
Author Affiliations +
Abstract
The best strategy to transfer nanopatterns formed from the self assembly of PS/PMMA bloc copolymers into a silicon substrate is investigated. We show that a hard mask patterning strategy combined with a plasma cure treatment of the PS mask are necessary to reproduce the PS mask pattern into the silicon with a good critical dimension control. In addition, typical silicon etching plasma condition must be revisited to allow the etching of sub-20 nm holes. These results indicate that block copolymer can be readily used as etching masks for advanced CMOS technology.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Chevolleau, G. Cunge, M. Delalande, X. Chevalier, R. Tiron, S. David, M. Darnon, and C. Navarro "Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280M (16 March 2012); https://doi.org/10.1117/12.916399
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Cited by 5 scholarly publications.
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KEYWORDS
Etching

Silicon

Picosecond phenomena

Plasma

Silica

Photomasks

Plasma etching

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