16 March 2012 Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process
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Abstract
The best strategy to transfer nanopatterns formed from the self assembly of PS/PMMA bloc copolymers into a silicon substrate is investigated. We show that a hard mask patterning strategy combined with a plasma cure treatment of the PS mask are necessary to reproduce the PS mask pattern into the silicon with a good critical dimension control. In addition, typical silicon etching plasma condition must be revisited to allow the etching of sub-20 nm holes. These results indicate that block copolymer can be readily used as etching masks for advanced CMOS technology.
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T. Chevolleau, T. Chevolleau, G. Cunge, G. Cunge, M. Delalande, M. Delalande, X. Chevalier, X. Chevalier, R. Tiron, R. Tiron, S. David, S. David, M. Darnon, M. Darnon, C. Navarro, C. Navarro, } "Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280M (16 March 2012); doi: 10.1117/12.916399; https://doi.org/10.1117/12.916399
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