17 March 2012 Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer
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Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280R (2012); doi: 10.1117/12.916033
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
We investigated removal of chemically amplified negative-tone i-line resist SU-8 using hydrogen radicals, which was generated by the catalytic decomposition of H2/N2 mixed gas (H2:N2 = 10:90vol.%) using tungsten hot-wire catalyzer. SU-8 with exposure dose from 7 (Dg100×0.5) to 280mJ/cm2 (Dg100×20) were removed by hydrogen radicals without a residual layer. When the distance between the catalyzer and the substrate was 100mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 50°C, removal rate of SU-8 was 0.17μm/min independent of exposure dose to the SU-8. Finally, we obtained high removal rate for SU-8 (exposure dose = 14mJ/cm2 (Dg100)) of approximately 4μm/min when the distance between the catalyzer and the substrate was 20mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 165°C.
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Akihiko Kono, Yu Arai, Yousuke Goto, Hideo Horibe, "Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280R (17 March 2012); doi: 10.1117/12.916033; https://doi.org/10.1117/12.916033
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KEYWORDS
Hydrogen

Silicon

Microelectromechanical systems

Tungsten

Manufacturing

Temperature metrology

Epoxies

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