22 February 2012 25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions
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Abstract
We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with ± 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18μm CMOS process, and provides a VπLπ < 1V • cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
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Xi Xiao, Xi Xiao, Yingtao Hu, Yingtao Hu, Hao Xu, Hao Xu, Xianyao Li, Xianyao Li, Kang Xiong, Kang Xiong, Zhiyong Li, Zhiyong Li, Tao Chu, Tao Chu, Yude Yu, Yude Yu, Jinzhong Yu, Jinzhong Yu, } "25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330I (22 February 2012); doi: 10.1117/12.920386; https://doi.org/10.1117/12.920386
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