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22 February 2012 A study of thermal properties of power AlGaInP and InGaN LEDs
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Abstract
III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) have received much attention for their important applications in several areas. The AlGaInP semiconductor materials are capable of emitting light of red and orange, and the InGaN semiconductor materials are capable of emitting light of green and blue. Those four colors of LED chips are encapsulated with epoxy in same conditions. In this paper, the junction temperature of power AlGaInP and InGaN LEDs were measured at different drive current by forward - voltage method .Optical and electrical parameters under different temperature were also measured. Thermal properties of power AlGaInP and InGaN LEDs were analyzed for strong dependence of optical and electrical characteristics of power light-emitting diodes on the diode junction temperature.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Ding, Weiling Guo, Bifeng Cui, Desheng Cui, Guoqing Wu, and Weiwei Yan "A study of thermal properties of power AlGaInP and InGaN LEDs", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 833315 (22 February 2012); https://doi.org/10.1117/12.914762
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