22 February 2012 Optical properties of TiO2 thin film grown on quartz substrate by sol-gel method
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Abstract
TiO2 film was deposited on quartz substrate by sol-gel method. X-ray diffraction analysis and Raman scattering measurement indicate that the TiO2 film is the pure rutile phase structure. From photoluminescence spectra, it is found that the TiO2 film shows a near-infrared luminescence band centered at about 832 nm, and two visible luminescence bands centered at about 426 nm and 524 nm, respectively. The refractive index n, extinct coefficient k, optical band gap EOBG and thickness d of TiO2 film were extracted by fitting transmission spectra with the Adachi's dielectric function model and a three-phase layered model. It is found that n value increases and then decreases with increasing wavelength, while k decreases continuously. The thickness of TiO2 film is about 297 nm. EOBG value is about 3.72eV and larger than that attained by Tauc's law, which is about 3.28eV.
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Jianjun Tian, Jianjun Tian, Hongmei Deng, Hongmei Deng, Lin Sun, Lin Sun, Hui Kong, Hui Kong, Pingxiong Yang, Pingxiong Yang, Junhao Chu, Junhao Chu, } "Optical properties of TiO2 thin film grown on quartz substrate by sol-gel method", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331D (22 February 2012); doi: 10.1117/12.916849; https://doi.org/10.1117/12.916849
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