Photodiodes on the basis of gallium phosphide with increased sensitivity at a wavelength of 254 nm

Yu. Dobrovolsky; L. Pidkamin; G. Prokhorov

doi:10.1117/12.920931

22 November 2011 Photodiodes on the basis of gallium phosphide with increased sensitivity at a wavelength of 254 nm

Yu. Dobrovolsky, L. Pidkamin, G. Prokhorov

Proceedings Volume 8338, Tenth International Conference on Correlation Optics; 83380N (2011) https://doi.org/10.1117/12.920931
Event: Correlation Optics 2011, 2011, Chernivsti, Ukraine

Abstract

Is offered a modificated technology for photodiodes based on n⁺-n-GaP-SnO2(F). This technology is based on analysis of parameters, which are determining the sensitivity of the photodiode with the surface-barrier structure. Also, a special algorithm of computer simulation was developed.. As a result a monochromatic current sensitivity at a wavelength 254 nm (no more than 0,09 - 0,08 A/W) was obtained. The uniformity of the sensitivity of a photosensitive element was no more than 5%.

Citation Download Citation

Yu. Dobrovolsky, L. Pidkamin, and G. Prokhorov "Photodiodes on the basis of gallium phosphide with increased sensitivity at a wavelength of 254 nm", Proc. SPIE 8338, Tenth International Conference on Correlation Optics, 83380N (22 November 2011); https://doi.org/10.1117/12.920931

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