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30 March 2012Medical CT image reconstruction accuracy in the presence of metal objects using x-rays up to 1 MeV with x-ray targets of beryllium,
carbon, aluminum, copper, and tungsten
Flat panels imagers based on amorphous silicon technology (a-Si) for digital radiography have been
accepted by the medical community as having several advantages over film-based systems.
Radiotherapy treatment planning systems employ computed tomographic (CT) data sets and
projection images to delineate tumor targets and normal structures that are to be spared from
radiation treatment. The accuracy of CT numbers is crucial for radiotherapy dose calculations.
Conventional CT scanners operating at kilovoltage X-ray energies typically exhibit significant image
reconstruction artifacts in the presence of metal implants in human body. Megavoltage X-ray
energies have problems maintaining contrast sensitivity for the same dose as kV X-ray systems. We
intend to demonstrate significant improvement in metal artifact reductions and electron density
measurements using an amorphous silicon a-Si imager obtained with an X-ray source that can
operate at energies up to 1 MeV. We will investigate the ability to maintain contrast sensitivity at
this higher X-ray energy by using targets with lower atomic numbers and appropriate amounts of Xray
filtration than are typically used as X-ray production targets and filters.
James Clayton,Arundhuti Ganguly, andGary Virshup
"Medical CT image reconstruction accuracy in the presence of metal objects using x-rays up to 1 MeV with x-ray targets of beryllium,
carbon, aluminum, copper, and tungsten", Proc. SPIE 8344, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2012, 83441G (30 March 2012); https://doi.org/10.1117/12.917332
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James Clayton, Arundhuti Ganguly, Gary Virshup, "Medical CT image reconstruction accuracy in the presence of metal objects using x-rays up to 1 MeV with x-ray targets of beryllium, carbon, aluminum, copper, and tungsten," Proc. SPIE 8344, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2012, 83441G (30 March 2012); https://doi.org/10.1117/12.917332