31 March 2012 Remarkable evolution of electrical conductivity in Al:ZnO films
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Abstract
We report here the investigation of Al-doped ZnO films fabricated by the RF magnetron deposition technique. The films show excellent crystalline quality with atomically smooth surface morphology. The Al-doped ZnO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy UV-visible spectrophotometer and four probe technique. It was found that the morphological, structural, electrical and optical properties of Al-doped ZnO films are greatly dependent on substrate temperature. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. The electrical resistivity of Al-doped ZnO films decreases with increasing substrate temperature and was found to be close to 1.5 × 10-3 ohm-cm and transmittance >85% in the visible region.
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H. Dondapati, R. Mundle, R. B. Konda, M. Bahoura, A. K. Pradhan, "Remarkable evolution of electrical conductivity in Al:ZnO films", Proc. SPIE 8344, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2012, 83441M (31 March 2012); doi: 10.1117/12.914639; https://doi.org/10.1117/12.914639
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KEYWORDS
Zinc oxide

Aluminum

Zinc

Glasses

Sputter deposition

Absorption

X-ray diffraction

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