3 April 2012 Numerical demonstration of MEMS strain sensor
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Abstract
Silicon has piezoresistive property that allows designing strain sensor with higher gauge factor compared to conventional metal foil gauges. The sensing element can be micro-scale using MEMS, which minimizes the effect of strain gradient on measurement at stress concentration regions such as crack tips. The challenge of MEMS based strain sensor design is to decouple the sensing element from substrate for true strain measurement and to compensate the temperature effect on the piezoresistive coefficients of silicon. In this paper, a family of MEMS strain sensors with different geometric designs is introduced. Each strain sensor is made of single crystal silicon and manufactured using deposition/ etching/oxidation steps on a n- doped silicon wafer in (100) plane. The geometries include sensing element connected to the free heads of U shape substrate, a set of two or more sensing elements in an array in order to capture strain gradients and two directional sensors. The response function and the gauge factor of the strain sensors are identified using multi-physics models that combine structural and electrical behaviors of sensors mounted on a strained structure. The relationship between surface strain and strain at microstructure is identified numerically in order to include the relationship in the response function calculation.
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Hossain Saboonchi, Hossain Saboonchi, Didem Ozevin, Didem Ozevin, } "Numerical demonstration of MEMS strain sensor", Proc. SPIE 8345, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2012, 83451H (3 April 2012); doi: 10.1117/12.914905; https://doi.org/10.1117/12.914905
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