16 April 2012 A fast approach to model EUV mask 3D and shadowing effects
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Proceedings Volume 8352, 28th European Mask and Lithography Conference; 835207 (2012) https://doi.org/10.1117/12.921442
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
Abstract
EUV lithography is one of the leading candidates to replace traditional DUV for semiconductor patterning. Different from DUV mask, EUV masks consists of an absorber pattern layer and 40 layers of alternating molybdenum and silicon to generate reflective mask near field. Due to the complexity of the EUV mask structure, the high profile of the absorber layer relative to wavelength, and the non-telecentric nature of EUV optics, mask 3D- and shadowing effects are important and must be taken into consideration. The goal of our simulator is to build an empirical model specially tailored to capture such effects by reconstructing thin mask spectrum to match with rigorous simulation within the pupil of interests. In this study, we will present the mechanisms and accuracy results of our absorber model.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ying Li, Ying Li, Danping Peng, Danping Peng, Masaki Satake, Masaki Satake, Peter Hu, Peter Hu, } "A fast approach to model EUV mask 3D and shadowing effects", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 835207 (16 April 2012); doi: 10.1117/12.921442; https://doi.org/10.1117/12.921442
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