Translator Disclaimer
16 April 2012 EUVL mask performance and optimization
Author Affiliations +
Proceedings Volume 8352, 28th European Mask and Lithography Conference; 835208 (2012) https://doi.org/10.1117/12.921209
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
Abstract
EUV lithography requires an exposure system with complex reflective optics and an equally complex EUV dedicated reflective mask. The required high level of reflectivity is obtained by using multilayers. The multilayer of the system optics and the mask are tuned to each other. The mask is equipped with an additional patterned absorber layer. The EUV mask is an optical element with many parameters that contribute to the final image and overlay quality on the wafer and the productivity of the system. Several of these parameters can be tuned for optimal overlay, imaging and productivity results. This should be done with care because of possible interaction between parameters. We will present an overview of the EUV mask contributors to the imaging, overlay and productivity performance for the 27 nm node and below, such as multilayer and absorber stack composition, reflectivity and reflectivity uniformity. These parameters will be reviewed in the context of real-life scanner parameters for the ASML NXE:3100 and NXE:3300 system configurations. The predictions will be compared to actual exposure results on NXE:3100 systems (NA=0.25) for various masks and extrapolated to the NXE:3300 (NA=0.33). In particular, we will present extensive multilayer and absorber actinic spectral reflectance measurements of a state-ofthe art EUV mask over a range of incidence angles corresponding to an NA of 0.33 at multiple positions within the image field. The ML measurements allow calibrating ML stack for imaging simulations. It allows also the estimation of mask-induced apodization effects having impact on overlay. In general, the reflectivity measurements will give detailed variations over the image field of mask parameters such as ML centroid wavelength and absorber reflectivity which contribute to CD uniformity. Such a relation will be established by means of rigorous full stack imaging simulations taking into account optical properties of the coming NXE:3300 system. Based on this investigation we will propose optimal EUV mask parameters for the 22 nm node EUV lithography and below, to provide guidance for mask manufacturers to support the introduction of EUV High Volume Manufacturing.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Natalia Davydova, Robert de Kruif, Eelco van Setten, Brid Connolly, Karolien Mehagnoul, John Zimmerman, Noreen Harned, and Franklin Kalk "EUVL mask performance and optimization", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 835208 (16 April 2012); https://doi.org/10.1117/12.921209
PROCEEDINGS
15 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top