16 April 2012 Optimization method of photolithography process by means of atomic force microscopy
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Proceedings Volume 8352, 28th European Mask and Lithography Conference; 83520B (2012) https://doi.org/10.1117/12.918024
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
Abstract
In this article authors present a method for determining optimal photoresist exposure parameters in a photolithography process by an analysis of a topographic profile of exposed images in a photoresist layer. As a measurement tool an Atomic Force Microscopy (AFM) integrated with a system for maskless lithography was used. The measurement system with the piezoresistive cantilever and experimental procedure was described. Initial experiments result of determining the optimal exposure energy and minimizing the stitching error method were presented.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Sierakowski, Paweł Janus, Daniel Kopiec, Konrad Nieradka, Krzysztof Domanski, Piotr Grabiec, Teodor Gotszalk, "Optimization method of photolithography process by means of atomic force microscopy", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520B (16 April 2012); doi: 10.1117/12.918024; https://doi.org/10.1117/12.918024
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