31 May 2012 Ultralow dark current CdHgTe FPAs in the SWIR range at CEA and Sofradir
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Abstract
We report here first results carried out at CEA and Sofradir to build ultra low dark current focal plane arrays (FPA) in the short wave infrared range (SWIR) for space applications. Those FPAs are dedicated to very low flux detection in the 2μm wavelength range. In this purpose, Sofradir has designed a source follower per detector readout circuit (ROIC), 384x288, 15μm pitch. This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI and low flux characterisations have been carried out at CEA-SAp at low temperature (from 60 to 160K). Both ion implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) have been processed. Dark current measurements are discussed in comparison with previous results from the literature. State of the art dark currents are recorded for temperatures higher than 120K. At temperatures lower than 100K, the decrease in dark current saturates for both technologies. In this regime, currents between 0.4 and 0.06 e/s/pixel are reported.
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O. Gravrand, O. Gravrand, L. Mollard, L. Mollard, O. Boulade, O. Boulade, V. Moreau, V. Moreau, E. Sanson, E. Sanson, G. Destefanis, G. Destefanis, } "Ultralow dark current CdHgTe FPAs in the SWIR range at CEA and Sofradir", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530C (31 May 2012); doi: 10.1117/12.921859; https://doi.org/10.1117/12.921859
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