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31 May 2012 100mm GaSb substrate manufacturing for IRFPA epi growth
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Mega-pixel FPAs in both MWIR and LWIR spectral bands based on Sb strained layer superlattices and nBn epitaxial structures grown on GaSb substrates have recently demonstrated impressive performances at high operating temperatures. An essential component of SLS epitaxial growth initiation is the starting wafer flatness, smoothness and haze. Large diameter GaSb wafers must be manufactured meeting these stringent demands and current state-of-the-art GaSb substrate manufacturing is focused on 100mm wafer diameters. Using a newly developed polishing process, 100mm GaSb substrate manufacturing has resulted in consistent starting wafer peak-to-valley flatness well below 5μm and surface roughness below Rms of 0.2nm. Final substrate and epitaxial wafer Surfscan mapping (<1000/cm2 surface defects) and surface roughness (Rms~0.2nm) are presented and compared with measurements of the starting substrates. This paper evaluates the manufacturing and epitaxial growth on 100mm GaSb substrates that have been processed to achieve an MBE grown InAsSb-based nBn MWIR photodetector structure.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lisa P. Allen, J. Patrick Flint, Greg Meshew, Gordon Dallas, John Trevethan, Dmitri Lubyshev, Yueming Qiu, Joel M. Fastenau, and Amy W. K. Liu "100mm GaSb substrate manufacturing for IRFPA epi growth", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835313 (31 May 2012);

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