Formation of GaN film on Si for microbolometer

Yong Soo Lee; Dong-Seok Kim; Chul-Ho Won; Jong-Hoon Kim; Chan-Ho Bu; Sung-Ho Hahm; Young-Chul Jung; Jung-Hee Lee

doi:10.1117/12.919072

31 May 2012 Formation of GaN film on Si for microbolometer

Yong Soo Lee, Dong-Seok Kim, Chul-Ho Won, Jong-Hoon Kim, Chan-Ho Bu, Sung-Ho Hahm, Young-Chul Jung, Jung-Hee Lee

Author Affiliations +

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 835318 (2012) https://doi.org/10.1117/12.919072
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

In this report, we describe thin 200nm thick GaN film formation technology on Si which allows microbolometer application. GaN layer with AlN buffer layer obtained by the MOCVD has TCR of about -0.64 %/°C and sheet resistance of ~2800 ohm/sq. Acquired GaN films were analyzed by XRD, SEM, Hall measurement, and etc. The successful growth of thin single crystalline or polycrystalline GaN film on Si can be a good semiconductor bolometric material. And the multi wavelength detecting systems with GaN based devices including UV detector, power devices, amplifier with GaN and AlGaN MOSFET, HEMT, and etc can be realized. We obtained thin(~200nm) crystalline GaN layer on Si(111) with AlN buffer layers with FWHM(full width at half maximum) of ~1800 arcsec. And its bolometric characteristic was analyzed.

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Yong Soo Lee, Yong Soo Lee, Dong-Seok Kim, Dong-Seok Kim, Chul-Ho Won, Chul-Ho Won, Jong-Hoon Kim, Jong-Hoon Kim, Chan-Ho Bu, Chan-Ho Bu, Sung-Ho Hahm, Sung-Ho Hahm, Young-Chul Jung, Young-Chul Jung, Jung-Hee Lee, Jung-Hee Lee, } "Formation of GaN film on Si for microbolometer", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835318 (31 May 2012); doi: 10.1117/12.919072; https://doi.org/10.1117/12.919072

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