31 May 2012 Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node
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Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83531P (2012); doi: 10.1117/12.919566
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States
Abstract
Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commercially available TowerJazz CA18 0.18μm mixed-signal CMOS technology platform for advanced read-out integrated circuit (ROIC) applications. In his paper, new devices in development for commercial purposes and which may have applications in advanced ROICs are reported. First, results of buried-channel 3.3V field effect transistors (FETs) are detailed. The buried-channel pFETs show flicker (1/f) noise reductions of ~5X in comparison to surface-channel pFETs along with a significant reduction of the body constant parameter. The buried-channel nFETs show ~2X reduction of 1/f noise versus surface-channel nFETs. Additional reduced threshold voltage nFETs and pFETs are also described. Second, a high-density capacitor solution with a four-stacked linear (metal-insulator-metal) MIM capacitor having capacitance density of 8fF/μm2 is reported. Additional stacking with MOS capacitor in a 5V tolerant process results in >50fC/μm2 charge density. Finally, one-time programmable (OTP) and multi-time programmable (MTP) non-volatile memory options in the CA18 technology platform are outlined.
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Arjun Kar-Roy, Paul Hurwitz, Richard Mann, Yasir Qamar, Samir Chaudhry, Robert Zwingman, David Howard, Marco Racanelli, "Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83531P (31 May 2012); doi: 10.1117/12.919566; https://doi.org/10.1117/12.919566
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KEYWORDS
Capacitors

Readout integrated circuits

Field effect transistors

Metals

Oxides

CMOS technology

Capacitance

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