31 May 2012 Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al2O3 films
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Abstract
HgCdTe passivation process must be performed at low temperature in order to reduce Hg depletion. Low temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for thin highly conformal films to meet the demand. Room temperature PE-ALD Al2O3 film's passivation on HgCdTe has been studied. Conformal film was investigated through SEM images of the Al2O3 film deposited onto high aspect ratio features dry etched into HgCdTe. Minority carrier lifetime was measured and compared by photoconductive decay transients of HgCdTe before and after deposition. Room temperature ALD Al2O3 film increased the minority carrier lifetime of HgCdTe.
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Richard Fu, James Pattison, Andrew Chen, Osama Nayfeh, "Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al2O3 films", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83532I (31 May 2012); doi: 10.1117/12.918605; https://doi.org/10.1117/12.918605
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