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31 May 2012 HOT MWIR HgCdTe performance on CZT and alternative substrates
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Mid wave infrared (MWIR) imaging in the 3-5 um spectral band has traditionally been performed by InSb sensors. InSb technology is presently limited to a near 80K operating temperature and the hunt has been on for a higher operating temperature (HOT) technology that does as well at 150K as InSb at 80K, but with reduced power requirements. Amongst these alternative technologies are photovoltaic sensors consisting of heterostructures of HgCdTe (MCT). In previous work we assessed the device performance of several alternative MWIR HOT technologies (MCT on Si, MCT on GaAs) as a function of operating temperature. In this work we compare the NEDT histograms for these alternative technologies with InSb to better understand how their performance can be improved at higher temperatures. We also present analysis formalism for quantitatively assessing the number of FPA pixels which reside in the central versus the shoulder portions of the histogram.Begin the Introduction two lines below the Keywords. The manuscript should not have headers, footers, or page numbers. It should be in a onecolumn format. References are often noted in the text1 and cited at the end of the paper.
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Joseph G. Pellegrino, Roger DeWames, Philip Perconti, Curtis Billman, and Patrick Maloney "HOT MWIR HgCdTe performance on CZT and alternative substrates", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83532X (31 May 2012);

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