31 May 2012 Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP)
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Abstract
We have investigated optical properties and figures of merit of sub-monolayer quantum dots (SML-QD) infrared photodetector and compared them with conventional Stranski-Krastanov quantum dots (SK-QD) with a similar design. The purpose of this study is to examine the effects of varying the number of stacks(2,3,4,5 and 6) in SML-QD detector on its device performance The peak of photoluminescence (PL) spectra of SK-QD and SML-QDs are observed at 1.07eV and 1.24~1.35eV at room temperature, respectively. The PL peak of 2 and 3 stacks SML QD are very close to the GaAs band edge peak (1.42eV) and the full width at half maximum (FWHM) of all the SML-QD are much narrower than SK-QD. Normal incidence photoresponse peak of 4 stacks SML QDIP are obtained at 7.5μm with responsivity of 0.5 A/W and detectivity of 1.2×1011 cm.Hz1/2/W (77K, 0.4V, f/2 optics), which is much narrower than spectral response of SK QDIP possibly due to bound-to-bound transition.
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Jun Oh Kim, Jun Oh Kim, Saumya Sengupta, Saumya Sengupta, Yagya Sharma, Yagya Sharma, Ajit V. Barve, Ajit V. Barve, Sang Jun Lee, Sang Jun Lee, Sam Kyu Noh, Sam Kyu Noh, Sanjay Krishna, Sanjay Krishna, } "Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP)", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835336 (31 May 2012); doi: 10.1117/12.919458; https://doi.org/10.1117/12.919458
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