High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

Abhay Joshi; Shubhashish Datta

doi:10.1117/12.919262

31 May 2012 High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

Abhay Joshi; Shubhashish Datta

Author Affiliations +

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83533D (2012) https://doi.org/10.1117/12.919262
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

Citation Download Citation

Abhay Joshi, Abhay Joshi, Shubhashish Datta, Shubhashish Datta, } "High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533D (31 May 2012); doi: 10.1117/12.919262; https://doi.org/10.1117/12.919262

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