A near infrared (NIR) and long-wavelength infrared (LWIR) dual-band infrared photodetector, which can switch
detection bands with light bias, is demonstrated at 77 K. The demonstrated scheme consists of series connected
photodetectors for different bands. The basic operating principle of the scheme is that without light bias, shorter
wavelength detector limits the total current and thus the device operates in NIR mode. With light bias on the NIR
detector, the LWIR detector becomes the current limiting device and the device then operates in LWIR mode. Proposed
design allows single indium-bump per pixel focal plane arrays, and in principle allows covering all tactical bands such as
UV, visible, NIR, SWIR, MWIR and LWIR bands with a single pixel.